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PTFB183404F - High Power RF LDMOS Field Effect Transistors

Download the PTFB183404F datasheet PDF. This datasheet also covers the PTFB183404E variant, as both devices belong to the same high power rf ldmos field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB183404E-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB183404F
Manufacturer Infineon
File Size 590.61 KB
Description High Power RF LDMOS Field Effect Transistors
Datasheet download datasheet PTFB183404F Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB183404E High Power RF LDMOS Field Effect Transistors
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs
PTFB090901EA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

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PTFB183404E PTFB183404F High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.
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