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PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB210801FA Package H-37265-2 ACPR (dBc) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR -15 Adj Lower -20 Adj Upper -25 Alt -30 Efficiency -35 -40 -45 45 40 35 30 25 20 15 10 -50 5 36 37 38 39 40 41 42 43.

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Datasheet Details

Part number PTFB210801FA
Manufacturer Infineon
File Size 468.56 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFB210801FA Datasheet

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Full PDF Text Transcription

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PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
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