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PTFB211503FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB211503FL datasheet PDF. This datasheet also covers the PTFB211503EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band.

Features

  • include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 30 Efficiency -35 25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB211503EL-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB211503FL
Manufacturer Infineon
File Size 457.97 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB211503FL Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

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PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 to 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic open-cavity packages with slotted and earless flanges.Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211503EL H-33288-6 PTFB211503FL H-34288-4/2 IMD (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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