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PTFB211803FL - Thermally-Enhanced High Power RF LDMOS FETs

Download the PTFB211803FL datasheet PDF. This datasheet also covers the PTFB211803EL variant, as both devices belong to the same thermally-enhanced high power rf ldmos fets family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.

Features

  • include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc) / ACPR (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 35 -30 Efficiency 30.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFB211803EL-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFB211803FL
Manufacturer Infineon
File Size 448.29 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTFB211803FL Datasheet

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Other Datasheets by Infineon

Part Number Description
PTFB211803EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501E Thermally-Enhanced High Power RF LDMOS FETs
PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs

Full PDF Text Transcription

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PTFB211803EL PTFB211803FL Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB211803EL H-33288-6 PTFB211803FL H-34288-4/2 IMD (dBc) / ACPR (dBc) Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
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