IRFU3710Z-701PbF Datasheet PDF - Infineon Power MOSFET Specs

IRFU3710Z-701PbF - Power MOSFET

This page provides the datasheet information for the IRFU3710Z-701PbF, a member of the IRFR3710ZPbF Power MOSFET family.

Datasheet Summary

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

Advanced Process Technology.
Ultra Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Multiple Package Options.
Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET VDSS 100V RDS(on) 18m ID 42A D D.

Datasheet Details

Part number	IRFU3710Z-701PbF
Manufacturer	Infineon
File Size	665.64 KB
Description	Power MOSFET
Datasheet	IRFU3710Z-701PbF Datasheet
Additional preview pages of the IRFU3710Z-701PbF datasheet.

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Full PDF Text Transcription

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Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Published: Dec 21, 2016 |