IRF100P218
Features
- Verylow RDS(on)
- Excellentgatechargex RDS(on)(FOM)
- Optimized Qrr
- 175°Coperatingtemperature
- Productvalidationaccordingto JEDECstandard
- Optimizedforbroadestavailabilityfromdistributionpartners
Benefits
- Reducedconductionlosses
- Idealforhighswitchingfrequency
- Lowerovershootvoltage
- Increasedreliabilityversus150°Cratedparts
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 100 V
RDS(on),typ
1.1 mΩ
RDS(on),max
1.28 mΩ
ID(Silicon Limited)
ID(Package Limited)
QG(0V..10V)
330 n C
Type/Ordering Code IRF100P218
Package PG-TO 247-3
Marking IRF100P218
PG-TO247-3
1 2 3
Gate Pin 1
Drain Pin 2
Source Pin 3
Related Links
- Final Data Sheet
1 Rev.2.1,2020-01-20
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