IRF100P219
Features
- Very low on‑resistance Rds(on)
- Excellent gate charge x Rds(on)(FOM)
- Optimized Qrr
- 175°C operating temperature
- Product validation according to JEDEC standard
- Optimized for broadest availability from distribution partners
Benefits
- Reduced conduction losses
- Ideal for high switching frequency
- Lower overshoot voltage
- Increased reliability versus 150°C rated parts
- Pb‑free lead plating; Ro HS pliant
- Lead free, Halogen‑free according to IEC61249‑2‑21
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V)
Key performance parameters
Value
Unit
1.7 mΩ
213 n C
168 n C
Type / Ordering code IRF100P219
Package PG‑TO247‑3
PG‑TO247‑3
1 2 3
Gate Pin 1
Drain Pin 2
Source Pin 3
Marking IRF100P219
Related links ‑
Datasheet https://.infineon.
Revision 2.2 2025‑01‑09
Public
Strong IRFET™ Power MOSFET, 100 V
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