• Part: IRF100PW219
  • Description: 100V Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.01 MB
Download IRF100PW219 Datasheet PDF
Infineon
IRF100PW219
Features - Very low on‑resistance Rds(on) - Excellent gate charge x Rds(on) (FOM) - Optimized Qrr - 175°C operating temperature - Product validation according to JEDEC standard - Optimized for broadest availability from distribution partners Benefits - Reduced conduction losses - Ideal for high switching frequency - Lower overshoot voltage - Increased reliability versus 150°C rated parts - Pb‑free lead plating; Ro HS pliant - Lead free, Halogen‑free according to IEC61249‑2‑21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),max ID Qoss QG (0V..10V) Key performance parameters Value Unit 1.7 mΩ 213 n C 168 n C Type / Ordering code IRF100PW219 Package PG‑TO247‑3 PG‑TO247‑3 Tab 1 2 3 Gate Pin 1 Drain Pin 2 Source Pin 3 Marking 100PW219 Related links ‑ Datasheet https://.infineon. Revision 2.0 2025‑01‑10 Public Strong IRFET™ Power MOSFET, 100...