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IRFU6215PbF - Power MOSFET

This page provides the datasheet information for the IRFU6215PbF, a member of the IRFR6215PbF Power MOSFET family.

Datasheet Summary

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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Datasheet preview – IRFU6215PbF

Datasheet Details

Part number IRFU6215PbF
Manufacturer Infineon
File Size 618.92 KB
Description Power MOSFET
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Full PDF Text Transcription

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IRFR6215PbF IRFU6215PbF  P-Channel  175°C Operating Temperature  Surface Mount (IRFR6215)  Straight Lead (IRFU6215)  Advanced Process Technology  Fast Switching  Fully Avalanche Rated  Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications.
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