IRFU3711Z - HEXFET Power MOSFET

This page provides the datasheet information for the IRFU3711Z, a member of the IRFR3711Z HEXFET Power MOSFET family.

Features

in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capac.

International Rectifier

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Datasheet Details

Part number	IRFU3711Z
Manufacturer	International Rectifier
File Size	211.15 KB
Description	HEXFET Power MOSFET
Datasheet	IRFU3711Z Datasheet
Additional preview pages of the IRFU3711Z datasheet.

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Full PDF Text Transcription

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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current VDSS 20V PD - 94651B IRFR3711Z IRFU3711Z HEXFET® Power MOSFET RDS(on) max Qg 5.

Published: Apr 15, 2015 |