Datasheet4U Logo Datasheet4U.com

IRF5803 - Power MOSFET

Download the IRF5803 datasheet PDF. This datasheet also covers the IRF5803PbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF5803PbF-Infineon.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
 Ultra Low On-Resistance  P-Channel MOSFET  Surface Mount  Available in Tape & Reel  Low Gate Charge  Lead-Free  Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Published: |