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PD-95262B
IRF5803PbF
HEXFET® Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free
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VDSS
-40V
RDS(on) max (mW)
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium.
IRF5803PbF Datasheet
