Datasheet4U Logo Datasheet4U.com

IRF5803D2 - FETKY MOSFET

Description

The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications.

HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • k T J = P DM x ZthJA + TA 1 10 0.01 0.1 100  PDM t1 t2 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdRE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF5803 Power MOSFET Infineon
IRF5803PbF Power MOSFET Infineon
IRF50N06 N-Channel MOSFET YZPST
IRF510 N-Channel MOSFET Transistor Inchange Semiconductor
IRF510 N-Channel Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF5803D2PbF Power MOSFET & Schottky Diode
IRF5803 Power MOSFET
IRF5803PbF Power MOSFET
IRF5800 Power MOSFET
IRF5800PBF Power MOSFET

Full PDF Text Transcription

Click to expand full text
PD- 94016 IRF5803D2 FETKY MOSFET & Schottky Diode l l l l l TM Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112mΩ Schottky Vf = 0.51V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Published: |