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IPD60N10S4L-12 - Power-Transistor

Datasheet Summary

Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD60N10S4L-12 Product Summary V DS R DS(on),max ID 100 V 12 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4L-12 Package Marking PG-TO252-3-313 4N10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25.

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Datasheet Details

Part number IPD60N10S4L-12
Manufacturer Infineon
File Size 129.45 KB
Description Power-Transistor
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OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD60N10S4L-12 Product Summary V DS R DS(on),max ID 100 V 12 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4L-12 Package Marking PG-TO252-3-313 4N10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=30A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg - IEC climatic category; DIN
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