IPD60R1K0CE - MOSFET

Datasheet Summary

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade.

Infineon Technologies

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Datasheet Details

Part number	IPD60R1K0CE
Manufacturer	Infineon Technologies
File Size	1.26 MB
Description	MOSFET
Datasheet	IPD60R1K0CE Datasheet
Additional preview pages of the IPD60R1K0CE datasheet.

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Full PDF Text Transcription

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IPD60R1K0CE,IPU60R1K0CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Feb 1, 2016 |