IPD60R170CFD7 - MOSFET

Datasheet Summary

Description

Features

Ultra-fast body diode.
Low gate charge.
Best-in-class reverse recovery charge (Qrr).
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
Lowest FOM RDS(on).
Qg and RDS(on).
Eoss.
Best-in-class RDS(on) in SMD and THD packages Benefits.
Excellent hard commutation ruggedness.
Highest reliability for resonant topologies.
Highest efficiency with outstanding ease-of-use / performance tradeoff.
Enabl.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPD60R170CFD7
Manufacturer	Infineon
File Size	1.00 MB
Description	MOSFET
Datasheet	IPD60R170CFD7 Datasheet
Additional preview pages of the IPD60R170CFD7 datasheet.

📁 Similar Datasheet

IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
IPD60R180C7 - N-Channel MOSFET (INCHANGE)
IPD60R180P7S - N-Channel MOSFET (INCHANGE)
IPD60R1K0CE - MOSFET (Infineon Technologies)
IPD60R1K0CE - N-Channel MOSFET (INCHANGE)
IPD60R1K4C6 - Power Transistor (Infineon Technologies)
IPD60R1K4C6 - N-Channel MOSFET (INCHANGE)
IPD60R1K5CE - MOSFET (Infineon Technologies)
IPD60R1K5CE - N-Channel MOSFET (INCHANGE)
IPD60R280CFD7 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPD60R180C7 - 600V MOSFET
IPD60R180CM8 - MOSFET
IPD60R180P7 - MOSFET
IPD60R180P7S - MOSFET
IPD60R210PFD7S - 600V MOSFET
IPD60R280CFD7 - Power-Transistor
IPD60R280P7 - Power-Transistor
IPD60R280P7S - Power-Transistor

Full PDF Text Transcription

Click to expand full text

IPD60R170CFD7 MOSFET 600VCoolMOSªCFD7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.

Published: Jun 13, 2019 |