IPD60N10S4-12 - Power-Transistor

Datasheet Summary

Features

N-channel - Normal Level - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green Product (RoHS compliant).
100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.2 mW 60 A PG-TO252-3-313 TAB 1 3 Type IPD60N10S4-12 Package Marking PG-TO252-3-313 4N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current.

Infineon

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Datasheet Details

Part number	IPD60N10S4-12
Manufacturer	Infineon
File Size	284.91 KB
Description	Power-Transistor
Datasheet	IPD60N10S4-12 Datasheet
Additional preview pages of the IPD60N10S4-12 datasheet.

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Full PDF Text Transcription

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OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD60N10S4-12 Product Summary VDS RDS(on),max ID 100 V 12.

Published: May 29, 2015 |