IPD60R180CM8 - MOSFET

Datasheet Summary

Description

Features

Suitable for hard and soft switching topologies thanks to an   outstanding commutation ruggedness.
Significant reduction of switching and conduction losses.
Best in class RDS(on) per package products enabled by ultra low RDS(on).
A Benefits.
Ease of use and fast design-in through low ringing tendency and usage   across PFC and PWM stages.
Simplified thermal management thanks to our advanced die attach   technique.
Increased power densi.

Infineon

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Datasheet Details

Part number	IPD60R180CM8
Manufacturer	Infineon
File Size	1.13 MB
Description	MOSFET
Datasheet	IPD60R180CM8 Datasheet
Additional preview pages of the IPD60R180CM8 datasheet.

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Full PDF Text Transcription

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IPD60R180CM8 MOSFET 600VCoolMOSªCM8PowerTransistor TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™CM8seriesisthesuccessortotheCoolMOS™7. ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellent easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD) forallproductswithoutstandingrobustnessagainsthardcommutationand excellentESDcapability.Furthermore,extremelylowswitchingand conductionlossesofCM8,makeswitchingapplicationsevenmore efficient.

Published: Jun 15, 2024 |