IPD60R1K5CE - MOSFET

Datasheet Summary

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade.

Infineon Technologies

📥 Download Datasheet

Datasheet Details

Part number	IPD60R1K5CE
Manufacturer	Infineon Technologies
File Size	1.26 MB
Description	MOSFET
Datasheet	IPD60R1K5CE Datasheet
Additional preview pages of the IPD60R1K5CE datasheet.

📁 Similar Datasheet

IPD60R1K5CE - N-Channel MOSFET (INCHANGE)
IPD60R1K0CE - N-Channel MOSFET (INCHANGE)
IPD60R1K4C6 - N-Channel MOSFET (INCHANGE)
IPD60R170CFD7 - MOSFET (Infineon)
IPD60R170CFD7 - N-Channel MOSFET (INCHANGE)
IPD60R180C7 - 600V MOSFET (Infineon)
IPD60R180C7 - N-Channel MOSFET (INCHANGE)
IPD60R180CM8 - MOSFET (Infineon)
IPD60R180P7 - MOSFET (Infineon)
IPD60R180P7S - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon Technologies

IPD60R1K0CE - MOSFET
IPD60R1K4C6 - Power Transistor
IPD60R2K0C6 - MOSFET
IPD60R2K1CE - MOSFET
IPD60R380C6 - MOSFET
IPD60R380E6 - MOSFET
IPD60R385CP - Power Transistor
IPD60R3K3C6 - MOSFET

Full PDF Text Transcription

Click to expand full text

IPD60R1K5CE,IPU60R1K5CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Feb 1, 2016 |