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IPD380P06NM - MOSFET

Description

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Features

  • P-Channel.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Normal Level.
  • Enhancement mode.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Datasheet Details

Part number IPD380P06NM
Manufacturer Infineon
File Size 852.95 KB
Description MOSFET
Datasheet download datasheet IPD380P06NM Datasheet
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IPD380P06NM MOSFET OptiMOSTMPowerTransistor,-60V Features •P-Channel •Verylowon-resistanceRDS(on) •100%avalanchetested •NormalLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 38 mΩ ID -35 A D-PAK tab 1 3 Drain tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD380P06NM Package PG-TO 252-3 Marking 380P06NM RelatedLinks - Final Data Sheet 1 Rev.2.0,2019-03-28 OptiMOSTMPowerTransistor,-60V IPD380P06NM TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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