IPD350N06L - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤35mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPD350N06L
Manufacturer	INCHANGE
File Size	237.70 KB
Description	N-Channel MOSFET
Datasheet	IPD350N06L Datasheet
Additional preview pages of the IPD350N06L datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤35mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 29 IDM Drain Current-Single Pulsed 116 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 2.2 75 UNIT ℃/W ℃/W isc website：www.iscsemi.

Published: Oct 8, 2020 |