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IPD35N10S3L-26 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

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Datasheet Details

Part number IPD35N10S3L-26
Manufacturer Infineon Technologies
File Size 319.66 KB
Description Power-Transistor
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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value
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