IPD30N03S2L - N-Channel MOSFET

Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPD30N03S2L
Manufacturer	INCHANGE
File Size	203.71 KB
Description	N-Channel MOSFET
Datasheet	IPD30N03S2L Datasheet
Additional preview pages of the IPD30N03S2L datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPD30N03S2L ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 136 Tj Max.

Published: Sep 3, 2020 |