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IPD30N06S2L-23 - Power-Transistor

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel Logic Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 23 30 V mΩ A PG-TO252-3-11 Type IPD30N06S2L-23 Package PG-TO252-3-11 Marking 2N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain curren.

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Datasheet Details

Part number IPD30N06S2L-23
Manufacturer Infineon
File Size 145.44 KB
Description Power-Transistor
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Full PDF Text Transcription

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IPD30N06S2L-23 OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on),max (SMD version) ID 55 23 30 V mΩ A PG-TO252-3-11 Type IPD30N06S2L-23 Package PG-TO252-3-11 Marking 2N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=30A Value 30
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