IPD320N20N3 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤32mΩ.
Enhancement mode:.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IPD320N20N3
Manufacturer	INCHANGE
File Size	238.17 KB
Description	N-Channel MOSFET
Datasheet	IPD320N20N3 Datasheet
Additional preview pages of the IPD320N20N3 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor IPD320N20N3,IIPD320N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤32mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 34 IDM Drain Current-Single Pulsed 136 PD Total Dissipation @TC=25℃ 136 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 75 UNIT ℃/W ℃/W isc website：www.

Published: Oct 8, 2020 |