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IPD30N03S4L-09 - Power-Transistor

Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green product (RoHS compliant).
100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single puls.

Infineon

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IPD30N03S4L-09 Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – IPD30N03S4L-09

Datasheet Details

Part number	IPD30N03S4L-09
Manufacturer	Infineon
File Size	171.36 KB
Description	Power-Transistor
Datasheet	IPD30N03S4L-09 Datasheet
Additional preview pages of the IPD30N03S4L-09 datasheet.

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Full PDF Text Transcription

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IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.

Published: Aug 25, 2014 |