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IPD320N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPD320N20N3 G
200 V 32 mW 34 A
Package Marking
PG-TO252-3 320N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse
ID
I D,pulse E AS
T C=25 °C T C=100 °C T C=25 °C I D=34 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
T C=25
IPD320N20N3 Datasheet
