Datasheet4U Logo Datasheet4U.com

IPD30N06S3-24 - Power-Transistor

Features

  • N-channel - Normal Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (RoHS compliant).
  • 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3-24 Package PG-TO252-3-11 Marking 3N0624 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2.

📥 Download Datasheet

Datasheet preview – IPD30N06S3-24

Datasheet Details

Part number IPD30N06S3-24
Manufacturer Infineon
File Size 180.79 KB
Description Power-Transistor
Datasheet download datasheet IPD30N06S3-24 Datasheet
Additional preview pages of the IPD30N06S3-24 datasheet.
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
IPD30N06S3-24 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested PG-TO252-3-11 Type IPD30N06S3-24 Package PG-TO252-3-11 Marking 3N0624 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I
Published: |