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IPD33CN10N - Power-Transistor

This page provides the datasheet information for the IPD33CN10N, a member of the IPD33CN10NG Power-Transistor family.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 100 V 34 mΩ 27 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPD33CN10N
Manufacturer Infineon
File Size 705.19 KB
Description Power-Transistor
Datasheet download datasheet IPD33CN10N Datasheet
Additional preview pages of the IPD33CN10N datasheet.

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Full PDF Text Transcription

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IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max (TO252) ID 100 V 34 mΩ 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G Package Marking PG-TO263-3 35CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25
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