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IPB029N15NM6 Final datasheet
MOSFET
OptiMOS™ 6 Power‑Transistor, 150 V
Features
• N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
2.9
mΩ
ID
165
A
Qoss
310
nC
QG
105
nC
Qrr (500A/μs)
220
nC
Type/Ordering Code IPB029N15NM6
Package PG‑TO263‑3
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Marking 029N15N6
Related Links ‑
Datasheet
https://www.infineon.com
1
Revision 2.