IPB029N06NF2S - MOSFET

Description

Features

Optimized for wide range of.

Infineon

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Datasheet Details

Part number	IPB029N06NF2S
Manufacturer	Infineon
File Size	1.01 MB
Description	MOSFET
Datasheet	IPB029N06NF2S Datasheet
Additional preview pages of the IPB029N06NF2S datasheet.

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IPB029N06NF2S MOSFET StrongIRFETTM2Power-Transistor Features •Optimizedforwiderangeofapplications •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 120 A Qoss 68 nC QG(0V..10V) 68 nC D²PAK tab 2 1 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB029N06NF2S Package PG-TO263-3 Marking 029N06NS RelatedLinks - Final Data Sheet 1 Rev.2.0,2022-10-19 StrongIRFETTM2Power-Transistor IPB029N06NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Published: Jul 21, 2023 |