Datasheet4U Logo Datasheet4U.com

PTFA191001F - Thermally-Enhanced High Power RF LDMOS FET

Download the PTFA191001F datasheet PDF. This datasheet also covers the PTFA191001E variant, as both devices belong to the same thermally-enhanced high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.

Features

  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PTFA191001E_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PTFA191001F
Manufacturer Infineon
File Size 267.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA191001F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTFA Plug Type Fixed Attenuator OPLINK
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs Infineon
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs Infineon

Other Datasheets by Infineon

Part Number Description
PTFA191001E Thermally-Enhanced High Power RF LDMOS FET
PTFA190451E Thermally-Enhanced High Power RF LDMOS FET
PTFA190451F Thermally-Enhanced High Power RF LDMOS FET
PTFA192001E Thermally-Enhanced High Power RF LDMOS FET
PTFA192001F Thermally-Enhanced High Power RF LDMOS FET

Full PDF Text Transcription

Click to expand full text
PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available.
Published: |