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PTFA191001E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications.

They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz.

Features

  • Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 30 V - Average output power = 25 W - Linear Gain = 17.0 dB - Efficiency = 27.5% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 41.0 dBc Typical two-carrier IS-95 performance at 1930 MHz, 30 V - Average output power = 25 W - Efficiency = 28% - Intermodulation distortion =.

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Datasheet Details

Part number PTFA191001E
Manufacturer Infineon
File Size 267.34 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA191001E Datasheet

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Full PDF Text Transcription

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PTFA191001E PTFA191001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA191001E and PTFA191001F are thermally-enhanced, 100-watt, internally-matched LDMOS FETs intended for WCDMA, IS-95 and CDMA2000 applications. They are characterized for singleand two-carrier WCDMA operation from 1930 to 1990 MHz. Thermally-enhanced packaging provides the coolest operation available.
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