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PTFA190451E - Thermally-Enhanced High Power RF LDMOS FET

Description

The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band.

These devices are available in thermally-enhanced packages with eared or earless flanges.

Features

  • Broadband internal matching Typical two-carrier WCDMA performance at 1960 MHz, 28 V - Average output power = 11 W - Linear gain = 17.5 dB - Efficiency = 28.0% - Intermodulation distortion =.
  • 39 dBc - Adjacent channel power =.
  • 42 dBc Typical CW performance, 1960 MHz, 28 V - Output power at P.
  • 1dB = 60 W - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSW.

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Datasheet Details

Part number PTFA190451E
Manufacturer Infineon
File Size 386.25 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFA190451E Datasheet

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Full PDF Text Transcription

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PTFA190451E PTFA190451F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA190451E and PTFA190451F are thermally-enhanced, 45-watt, internally matched LDMOS FETs designed for WCDMA, TD-SCDMA and other cellular standards in the 1930 to 1990 MHz frequency band. These devices are available in thermally-enhanced packages with eared or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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