Full PDF Text Transcription for 2SA882 (Reference)
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isc Silicon PNP Power Transistor 2SA882 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimu...
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -7 A 100 W 150 ℃ Tstg Storage Temperature -65~200 ℃ isc website：www.iscsemi.
2SA882 Datasheet
