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2SA818 - Silicon PNP Power Transistors

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min) Good Linearity of hFE Complement to Type 2SC1628 APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA818 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min) ·Good Lin...

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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1628 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -50 mA 1W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.

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