Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
DC Current Gain
: hFE= 60-200@ IC= -0.4A
Complement to Type 2SC1683
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Full PDF Text Transcription for 2SA843 (Reference)
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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC...
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Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA843 isc website：www.iscsemi.
2SA843 Datasheet
