Full PDF Text Transcription for 2SA807 (Reference)
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2SA807. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 50W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Minimum Lot-to-...
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tor-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -3 A 50 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SA807 isc website：www.iscsemi.
2SA807 Datasheet
