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Standard Power
MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 8P50 IXTT 8P50
VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg
Md Weight
Symbol
VDSS
VGS(th)
IGSS IDSS
RDS(on)
TO-247 (IXTH)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for 10s Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
-500
V
-500
V
±20
V
±30
V
-8
A
-32
A
-8
A
30
mJ
180
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
250
°C
1.13/10 Nm/lb.in.
IXTT8P50 Datasheet
