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High Voltage Power MOSFET
IXTT6N150 IXTH6N150
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
1500
V
1500
V
20
V
30
V
6
A
24
A
3
A
500
mJ
5
V/ns
540
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300 260
1.13 / 10
4 6
°C °C
Nm/lb.in.
IXTT6N150 Datasheet
