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Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH16P60P IXTT16P60P
RDS(on)
VDSS ID25
= = ≤
- 600V - 16A 720mΩ
TO-268 (IXTT)
G
S D (TAB)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings - 600 - 600 ±20 ±30 - 16 - 48 - 16 2.5 10 460 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g Features:
z z z z
TO-247 (IXTH)
G
D
D (TAB) S D = Drain TAB = Drain
G = Gate S = Source
1.6mm (0.062 in.
IXTT16P60P Datasheet
