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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P
V DSS
ID25
RDS(on)
= 300 V = 88 A ≤ 40 mΩ
TO-247 (IXTH)
Symbol
VDSS V
DGR
VGS VGSM ID25 ID(RMS) IDM IAR E
AR
EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions
TJ = 25° C to 150° C
T J
=
25°
C
to
150°
C;
R GS
=
1
MΩ
Continuous
Transient
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
T C
= 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
T J
≤150° C,
R G
=
4
Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque
TO-247 TO-264 TO-3P & TO-268
Maximum Ratings
300
V
300
V
G D S
±20
V TO-264 (IXTK)
±30
V
88
A
75
A
220
A
60
A
60
mJ
G D S
2.
IXTQ88N30P Datasheet
