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Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH86N25T IXTQ86N25T IXTV86N25T
VDSS = ID25 =
RDS(on) ≤
250V 86A 37mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAS EAS
PD
TJ TJM Tstg
TL TSOLD
Md
F C
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220
Maximum Ratings
250
V
250
V
± 30
V
86
A
75
A
190
A
10
A
1.5
J
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6.
IXTQ86N25T Datasheet
