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IXSH30N60B2D1 - High Speed IGBT with Diode

This page provides the datasheet information for the IXSH30N60B2D1, a member of the IXST30N60B2D1 High Speed IGBT with Diode family.

Features

  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

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Datasheet preview – IXSH30N60B2D1

Datasheet Details

Part number IXSH30N60B2D1
Manufacturer IXYS
File Size 637.05 KB
Description High Speed IGBT with Diode
Datasheet download datasheet IXSH30N60B2D1 Datasheet
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www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 10 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 48 30 28 90 ICM = 48 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ...
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