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IXSH20N60 - High Speed IGBT

This page provides the datasheet information for the IXSH20N60, a member of the IXSM20N60 High Speed IGBT family.

Features

  • q International standard packages q Guaranteed Short Circuit SOA capability q Low V CE(sat) - for low on-state conduction losses q High current handling capability q MOS Gate turn-on - drive simplicity q Fast Fall Time for switching speeds up to 20 kHz.

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Datasheet preview – IXSH20N60

Datasheet Details

Part number IXSH20N60
Manufacturer IXYS
File Size 57.26 KB
Description High Speed IGBT
Datasheet download datasheet IXSH20N60 Datasheet
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Full PDF Text Transcription

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Not for new designs Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 20 N60 IXSH/IXSM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES V CGR VGES VGEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH tSC (SCSOA) P C TJ TJM Tstg Md Weight g VGE= 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive T C = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 600 V 600 V ±20 V ±30 V 40 A 20 A 80 A ICM = 40 A @ 0.8 VCES 10 µs 150 W -55 ... +150 °C 150 °C -55 .
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