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HiPerFASTTM IGBT with Diode Short Circuit SOA Capability IXSH 24N60U1 IXSH 24N60AU1
VCES 600 V 600 V
IC25
VCE(sat)
48 A 2.2 V 48 A 2.7 V
Symbol V CES V CGR V GES V GEM I C25 I C90 ICM SSOA (RBSOA) t SC (SCSOA) PC TJ TJM T stg
Test Conditions T J = 25 ° C to 150 ° C600 T J = 25 ° C to 150 ° C; R GE = 1 M W Continuous Transient TC = 25 ° C TC = 90 ° C TC = 25 ° C, 1 ms V GE= 15 V, T VJ = 125 ° C, R G = 10 W Clamped inductive load, L = 100 m H V GE= 15 V, V CE = 360 V, T J = 125 ° C, R G = 82 W , non-repetitive TC = 25 ° C
Maximum Ratings V 600 ± 20 ± 30 48 24 96 I CM = 48 @ 0.8 V CES 10 150 -55 ... +150 150 -55 ...
IXSH24N60U1 Datasheet
