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Low VCE(sat) IGBT with Diode
Short Circuit SOA Capability
Preliminary data
IXSH 16N60U1 VCES IC25 VCE(sat)typ
= 600V = 16A = 1.8V
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC90 ICM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
TC = 25°C TC = 90°C TC = 25°C, 1 ms
V= GE
15
V,
T J
=
125°C,
R G
=
150
W
Clamped inductive load, L = 300 mH
t SC
(SCSOA)
PC
TJ TJM Tstg
Weight
V= GE
15
V,
V CE
=
360
V,
T J
=
125°C
RG = 82 W, non repetitive
TC = 25°C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s
Maximum Ratings
600
V
600
V
± 20
V
± 30
V
32
A
16
A
52
A
I = 32
A
CM
@ 0.8 VCES
5
ms
100
W
-55 ... +150
°C
150
°C
-55 ...
IXSH16N60U1 Datasheet
