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IXSH30N60 - Low VCE(sat) IGBT

This page provides the datasheet information for the IXSH30N60, a member of the IXSM30N60 Low VCE(sat) IGBT family.

Features

  • l l Mounting torque 1.13/10 Nm/lb. in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 5 TJ = 25°C TJ = 125°C 8 100 1 ±100 30N60 30N60A 2.5 3.0 V V µA mA nA V V l International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability.

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Datasheet Details

Part number IXSH30N60
Manufacturer IXYS Corporation
File Size 217.81 KB
Description Low VCE(sat) IGBT
Datasheet download datasheet IXSH30N60 Datasheet
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Full PDF Text Transcription

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Low VCE(sat) IGBT High Speed IGBT Short Circuit SOA Capability VCES IXSH/IXSM IXSH/IXSM 30N60 30N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbol VCES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 100 µH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 50 30 100 ICM = 60 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...
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