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IXSH20N60B2D1 - High Speed IGBT

Features

  • µs W °C °C °C g °C °C.
  • International standard package.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast fall time for switching speeds up to 20 kHz.

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Datasheet preview – IXSH20N60B2D1

Datasheet Details

Part number IXSH20N60B2D1
Manufacturer IXYS
File Size 613.39 KB
Description High Speed IGBT
Datasheet download datasheet IXSH20N60B2D1 Datasheet
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www.DataSheet4U.com High Speed IGBT Short Circuit SOA Capability Preliminary Data Sheet IXSH 20N60B2D1 VCES = 600 V I C25 = 35 A V CE(sat) = 2.5 V D1 Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering for 10s Symbol Test Conditions TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 82 Ω, non repetitive TC = 25°C Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C Maximum Ratings 600 600 ± 20 ± 30 35 20 21 60 ICM = 32 @ 0.8 VCES 10 190 -55 ... +150 150 -55 ...
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