IXSH15N120BD1 - Improved SCSOA Capability

This page provides the datasheet information for the IXSH15N120BD1, a member of the IXST15N120BD1 Improved SCSOA Capability family.

Features

High Blocking Voltage.
Epitaxial Silicon drift region - fast switching - small tail current - low switching losses.
MOS gate turn-on for drive simplicity.
Molding epoxies meet UL 94 V-0 flammability classification.

IXYS Corporation

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Datasheet Details

Part number	IXSH15N120BD1
Manufacturer	IXYS Corporation
File Size	88.56 KB
Description	Improved SCSOA Capability
Datasheet	IXSH15N120BD1 Datasheet
Additional preview pages of the IXSH15N120BD1 datasheet.

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Full PDF Text Transcription

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IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ...

Published: Aug 19, 2008 |